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High-speed devices and integrated circuits group. Electrical Engineering Department, Institute of Electronics Engineering National Tsing Hua University, Hsinchu, Taiwan.
0 Shawn S. H. Hsu, Professor. Delta Bldg. [email protected], 0. FinFET Scaling to 10nm Gate Length Bin Yu, Leland Chang*, Shibly Ahmed, Haihong Wang, Scott Bell, Chih-Yuh Yang, Cyrus Tabery, In this paper we report the design, fabrication, performance, and integration issues of double-gate FinFET with the physical The research collaboration.
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– The purpose of this paper is to develop analytical model for gate tunneling current for an ultra‐thin gate oxide n‐channel MOSFET with inevitable nano scale effects (NSE).Mosfet scaling research paper